Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
+0
Package Dimensions
SOT-23(PACKAGE)
Marking D
A6EV
G
S
REF.
A B
HM3400, H&M Semiconductor
HM3400
Synchronous Boost DC/DC Regulator HM3400
Features
Description
z Up to 96% Efficiency z Low voltage start-up:0.9V z Shut-down current: < 1µA.
HM3400C, H&M Semiconductor
+0&
N-Channel Enhancement Mode Power MOSFET
Description
The +0& uses advanced trench technology to provide excellent RDS(ON) and low gate c.
HM3401, H&M Semiconductor
HM3401
P-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.