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HM35N03D - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM35N03D
Manufacturer	H&M Semiconductor
File Size	326.43 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM35N03D-HMSemiconductor.pdf

HM35N03D Product details

Description

The HM35N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jul 1, 2025 |