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HM35N03Q - MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM35N03Q
Manufacturer	H&M Semiconductor
File Size	314.34 KB
Description	MOSFET
Datasheet	HM35N03Q-HMSemiconductor.pdf

HM35N03Q Product details

Description

The HM35N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jul 1, 2025 |