HM35N03Q MOSFET

H&M Semiconductor

Description

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The HM35N03Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM35N03Q
Manufacturer: H&M Semiconductor
File Size: 314.34 KB
Datasheet: HM35N03Q-HMSemiconductor.pdf
Description: MOSFET

Features

* VDS =30V,ID =35A RDS(ON) < 5.5mΩ @ VGS=10V RDS(ON) < 9.5mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special pro

HM35N03Q Distributors

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HM35N03Q MOSFET H&M Semiconductor

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