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HM35P06 P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Description

P-Channel Enhancement Mode Power MOSFET .
The HM35P06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .

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Datasheet Specifications

Part number: HM35P06
Manufacturer: H&M Semiconductor
File Size: 738.75 KB
Datasheet: HM35P06-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS =-60V,ID =-35A RDS(ON)

HM35P06 Distributors

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HM35P06 P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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