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HM3N40PR Datasheet - H&M Semiconductor

HM3N40PR Silicon N-Channel Power MOSFET

VDSS 400 V HM3N40PR, the silicon N-channel Enhanced ID 3A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 2.5 W which reduce the conduction loss, improve switching RDS(ON)TYP 2.8 Ω performance and enhance the avalanche energy. The transistor can be used in var.

HM3N40PR Features

* l Fast Switching l Low ON Resistance(Rdson≤3.4Ω) l Low Gate Charge (Typical Data:5nC) l Low Reverse transfer capacitances(Typical:4.5pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of LCD Power and adaptor. Absolute（Tc= 25℃ unless otherwise specified）： Symbol

HM3N40PR-H&MSemiconductor.pdf

Preview of HM3N40PR PDF

Datasheet Details

Part number:

HM3N40PR

Manufacturer:

H&M Semiconductor

File Size:

561.21 KB

Description:

Silicon n-channel power mosfet.

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HM3N40PR HM3N40PR Silicon N-Channel Power MOSFET H&M Semiconductor

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