HM4110 - N-Channel Enhancement Mode MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM4110
Manufacturer	H&M Semiconductor
File Size	663.02 KB
Description	N-Channel Enhancement Mode MOSFET
Datasheet	HM4110 Datasheet
Additional preview pages of the HM4110 datasheet.

Product details

Description

HM4110 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM4110 Device HM4110 Device Package TO-220-3L Reel Size - Tape width - Page 1 Quantity - HM4110 100VDS／±25VGS／170A(ID) N-Channel Enha ncement Mode MOSFET Electrical Characteristics of CP Test (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Min.Typ Max.Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA 100 V IDSS Ze

Features

VDSS=0V／VGSS=±25V／ID=10A RDS(ON)=5mΩ(max. )@VGS=10V.
Low Dense Cell Design.
Reliable and Rugged.
Advanced trench process technology .

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Published: Jul 1, 2025 |