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HM4260 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM4260 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4260

Datasheet Details

Part number	HM4260
Manufacturer	H&M Semiconductor
File Size	620.37 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4260 Datasheet
Additional preview pages of the HM4260 datasheet.

Product details

Description

The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability HM4260.

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Published: Nov 27, 2018 |