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HM4260 - N-Channel Enhancement Mode Power MOSFET

HM4260 Description

HM4260 N-Channel Enhancement Mode Power MOSFET .
The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM4260 Features

* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Spec

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Datasheet Details

Part number
HM4260
Manufacturer
H&M Semiconductor
File Size
620.37 KB
Datasheet
HM4260-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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