HM4260 Datasheet - H&M Semiconductor

HM4260, N-Channel Enhancement Mode Power MOSFET

HM4260 N-Channel Enhancement Mode Power MOSFET .
The HM4260 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Details

Part number:

HM4260

Manufacturer:

H&M Semiconductor

File Size:

620.37 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS =60V,ID =19A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Spec

HM4260 Distributors

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HM4260 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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