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HM4264 - N-Channel Enhancement Mode Power MOSFET

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H&M Semiconductor

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HM4264 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4264

Datasheet Details

Part number	HM4264
Manufacturer	H&M Semiconductor
File Size	415.63 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4264 Datasheet
Additional preview pages of the HM4264 datasheet.

Product details

Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Jun 30, 2025 |