HM4264 Datasheet - H&M Semiconductor

HM4264, N-Channel Enhancement Mode Power MOSFET

HM4264 N-Channel Enhancement Mode Power MOSFET .
The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Details

Part number:

HM4264

Manufacturer:

H&M Semiconductor

File Size:

415.63 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM4264 Distributors

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HM4264 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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