HM4264B Datasheet - H&M Semiconductor

HM4264B, N-Channel Enhancement Mode Power MOSFET

HM4264B N-Channel Enhancement Mode Power MOSFET .
The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Details

Part number:

HM4264B

Manufacturer:

H&M Semiconductor

File Size:

581.22 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 50V,ID =1A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM4264B Distributors

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HM4264B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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