HM4264B - N-Channel Enhancement Mode Power MOSFET
HM4264B Features
* VDS = 50V,ID =1A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Low gate to drain charge to reduce switching losses Schematic diagram Application
