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HM4264B - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM4264B N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4264B

Datasheet Details

Part number	HM4264B
Manufacturer	H&M Semiconductor
File Size	581.22 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4264B Datasheet
Additional preview pages of the HM4264B datasheet.

Product details

Description

The HM4264B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 50V,ID =1A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Nov 27, 2018 |