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HM4402B - N-Channel Enhancement Mode Power MOSFET

Description

The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current Schematic diagram HM4402B.

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Datasheet preview – HM4402B

Datasheet Details

Part number HM4402B
Manufacturer H&M Semiconductor
File Size 488.31 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4402B Datasheet
Additional preview pages of the HM4402B datasheet.

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Full PDF Text Transcription

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HM4402B N-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ●VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.
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