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HM4805B Dual P-Channel Enhancement Mode Power MOSFET

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Description

HM4805B Dual P-Channel Enhancement Mode Power MOSFET .
The HM4805B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

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Datasheet Specifications

Part number
HM4805B
Manufacturer
H&M Semiconductor
File Size
570.35 KB
Datasheet
HM4805B-HMSemiconductor.pdf
Description
Dual P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -30V,ID = -12A RDS(ON) =11.5m Ω @Vgs=10V RDS(ON) =15m Ω @Vgs=4.5V
* High Power and current handing capability
* Lead free product is acquired

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