Datasheet4U Logo Datasheet4U.com

HM4806B Datasheet - H&M Semiconductor

HM4806B Dual N-Channel Enhancement Mode Power MOSFET

HM4806B Features

* VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V

* High density cell design for ultra low Rdson

* Fully characterized Avalanche voltage and current Application

* DC/DC Converter

* Notebook Vcore Schematic diagram HM4806B Marking and pin Assignment SOP-8 top

HM4806B-HMSemiconductor.pdf

Preview of HM4806B PDF
HM4806B Datasheet Preview Page 2 HM4806B Datasheet Preview Page 3

Datasheet Details

Part number:

HM4806B

Manufacturer:

H&M Semiconductor

File Size:

397.76 KB

Description:

Dual n-channel enhancement mode power mosfet.

📁 Related Datasheet

HM4806 Dual N-Channel MOSFET (H&M semi)

HM4806D Dual N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM4803 Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM4805 Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM4805A Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM4805B Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM4812 Dual N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

HM4813 Dual P-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)

TAGS

HM4806B HM4806B Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

HM4806B Distributor