HM4806B Datasheet - H&M Semiconductor

HM4806B, Dual N-Channel Enhancement Mode Power MOSFET

HM4806B Dual N-Channel Enhancement Mode Power MOSFET .
The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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HM4806B-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM4806B

Manufacturer:

H&M Semiconductor

File Size:

397.76 KB

Description:

Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson

HM4806B Distributors

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HM4806B Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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