Datasheet4U.com

HM4806B - Dual N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

📥 Download Datasheet

HM4806B Dual N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4806B

Datasheet Details

Part number	HM4806B
Manufacturer	H&M Semiconductor
File Size	397.76 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4806B Datasheet
Additional preview pages of the HM4806B datasheet.

Product details

Description

The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.

📁 Similar Datasheet

HM4806 - Dual N-Channel MOSFET (H&M semi)
HM4828 - Dual N-Channel 60V MOSFET (VBsemi)
HM48416AP - 16384 word x 4 Bit Dynamic RAM (Hitachi)
HM48416AP-12 - 16384 word x 4 Bit Dynamic RAM (Hitachi)
HM48416AP-15 - 16384 word x 4 Bit Dynamic RAM (Hitachi)
HM48416AP-20 - 16384 word x 4 Bit Dynamic RAM (Hitachi)
HM4864-2 - (HM4864x-x) 65536 x 1-Bit DRAM (Hitachi)
HM4864-3 - 65536 x 1-Bit DRAM (Hitachi)

Other Datasheets by H&M Semiconductor

HM4806D - Dual N-Channel Enhancement Mode Power MOSFET
HM4803 - Dual P-Channel Enhancement Mode Power MOSFET
HM4805 - Dual P-Channel Enhancement Mode Power MOSFET
HM4805A - Dual P-Channel Enhancement Mode Power MOSFET
HM4805B - Dual P-Channel Enhancement Mode Power MOSFET
HM4812 - Dual N-Channel Enhancement Mode Power MOSFET

Published: Jun 30, 2025 |