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HM4806B Datasheet - H&M Semiconductor

HM4806B - Dual N-Channel Enhancement Mode Power MOSFET

HM4806B Features

* VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V

* High density cell design for ultra low Rdson

* Fully characterized Avalanche voltage and current Application

* DC/DC Converter

* Notebook Vcore Schematic diagram HM4806B Marking and pin Assignment SOP-8 top

HM4806B-HMSemiconductor.pdf

Preview of HM4806B PDF
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Datasheet Details

Part number:

HM4806B

Manufacturer:

H&M Semiconductor

File Size:

397.76 KB

Description:

Dual n-channel enhancement mode power mosfet.

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