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HM4806D - Dual N-Channel Enhancement Mode Power MOSFET

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H&M Semiconductor

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HM4806D Dual N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM4806D

Datasheet Details

Part number	HM4806D
Manufacturer	H&M Semiconductor
File Size	581.40 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4806D Datasheet
Additional preview pages of the HM4806D datasheet.

Product details

Description

The HM4806D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=4.5V RDS(ON) < 8.5mΩ @ VGS=2.5V.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.

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Published: Jul 1, 2025 |