HM4806D Datasheet - H&M Semiconductor

HM4806D, Dual N-Channel Enhancement Mode Power MOSFET

HM4806D Dual N-Channel Enhancement Mode Power MOSFET .
The HM4806D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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HM4806D-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM4806D

Manufacturer:

H&M Semiconductor

File Size:

581.40 KB

Description:

Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS =20V,ID =12A RDS(ON) < 8mΩ @ VGS=4.5V RDS(ON) < 8.5mΩ @ VGS=2.5V
* High density cell design for ultra low Rdson

HM4806D Distributors

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HM4806D Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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