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HM50N06D - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM50N06D N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM50N06D

Datasheet Details

Part number	HM50N06D
Manufacturer	H&M Semiconductor
File Size	406.77 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM50N06D Datasheet
Additional preview pages of the HM50N06D datasheet.

Product details

Description

The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 60V,ID =50A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Aug 12, 2025 |