Datasheet Details
- Part number
- HM50N06D
- Manufacturer
- H&M Semiconductor
- File Size
- 406.77 KB
- Datasheet
- HM50N06D-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
HM50N06D Description
HM50N06D N-Channel Enhancement Mode Power MOSFET .
The HM50N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
HM50N06D Features
* VDS = 60V,ID =50A RDS(ON) < 6.5mΩ @ VGS=10V
(Typ:5mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
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