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HM50N20 - N-Channel Enhancement Mode Power MOSFET

Product Overview

H&M Semiconductor

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HM50N20 N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Datasheet preview – HM50N20

Datasheet Details

Part number	HM50N20
Manufacturer	H&M Semiconductor
File Size	472.81 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM50N20 Datasheet
Additional preview pages of the HM50N20 datasheet.

Product details

Description

The HM50N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =200V,ID =50A RDS(ON) < 40mΩ @ VGS=10V (Typ:30mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 30, 2025 |