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HM50N20 - N-Channel Enhancement Mode Power MOSFET

HM50N20 Description

N-Channel Enhancement Mode Power MOSFET .
The HM50N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM50N20 Features

* VDS =200V,ID =50A RDS(ON) < 40mΩ @ VGS=10V (Typ:30mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technolog

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Datasheet Details

Part number
HM50N20
Manufacturer
H&M Semiconductor
File Size
472.81 KB
Datasheet
HM50N20-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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