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HM50N10K Datasheet - H&M Semiconductor

HM50N10K, N-Channel Enhancement Mode Power MOSFET

HM50N10K N-Channel Enhancement Mode Power MOSFET .
The HM50N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
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HM50N10K-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM50N10K

Manufacturer:

H&M Semiconductor

File Size:

457.40 KB

Description:

N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID =50A RDS(ON) < 23mΩ @ VGS=10V (Typ:14mΩ) Schematic diagram
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS

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