HM60N05 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Datasheet Details

The HM60N05 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS = 50V,ID =60A RDS(ON) < 7.6mΩ @ VGS=10V (Typ:5.7mΩ) RDS(ON) < 8.0mΩ @ VGS=4.5V (Typ:6.3mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram HM60N05 Application.
Power switching application.
Load switch Marking and pin assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package HM60N05 HM.

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