HM60N06 Power MOSFET

H&M Semiconductor

Description

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The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM60N06
Manufacturer: H&M Semiconductor
File Size: 377.08 KB
Datasheet: HM60N06-HMSemiconductor.pdf
Description: Power MOSFET

Features

* VDS = 60V,ID =60A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.2mΩ)
* Special process technology for high ESD capability
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent packag

HM60N06 Distributors

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HM60N06 Power MOSFET H&M Semiconductor

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