HM60N08 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The HM60N08 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM60N08
Manufacturer: H&M Semiconductor
File Size: 521.64 KB
Datasheet: HM60N08-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =80V,ID =60A RDS(ON) < 10.5mΩ @ VGS=10V (Typ:8.9mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technol

HM60N08 Distributors

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HM60N08 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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