HM6N10

N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number:

HM6N10

Manufacturer:

H&M Semiconductor

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489.27 KB

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📥 HM6N10 Datasheet PDF

Description:

N-channel enhancement mode power mosfet.
N-Channel Enhancement Mode Power MOSFET Description The +01 uses advanced trench technology and d.
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha.

✔ HM6N10 Features

VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent

✔ HM6N10 Application

General Features
VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
High density cell design for

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HM6N10 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor