HM6N10 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

📥 Download Datasheet

HM6N10 Datasheet Preview — Preview of HM6N10 PDF

Datasheet Specifications

Part number: HM6N10
Manufacturer: H&M Semiconductor
File Size: 489.27 KB
Datasheet: HM6N10-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM6N10 Distributors

📁 Related Datasheet

HM6-6617B883 HM6-6642-9 HM6-6642B-9 HM60 HM6116 HM6147H

📌 All Tags

HM6N10 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM6N10-like datasheet