HM6N70 N-channel Enhanced VDMOSFET

H&M Semiconductor

Description

HM6N70/F General .
HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swi.

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Datasheet Specifications

Part number: HM6N70
Manufacturer: H&M Semiconductor
File Size: 0.98 MB
Datasheet: HM6N70-HMSemiconductor.pdf
Description: N-channel Enhanced VDMOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Vol

HM6N70 Distributors

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HM6N70 N-channel Enhanced VDMOSFET H&M Semiconductor

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