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HM6N70F, HM6N70 Datasheet - H&M Semiconductor

HM6N70F - N-channel Enhanced VDMOSFET

HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and h

HM6N70F Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Par

HM6N70-HMSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HM6N70F, HM6N70. Please refer to the document for exact specifications by model.
HM6N70F Datasheet Preview Page 2 HM6N70F Datasheet Preview Page 3

Datasheet Details

Part number:

HM6N70F, HM6N70

Manufacturer:

H&M Semiconductor

File Size:

0.98 MB

Description:

N-channel enhanced vdmosfet.

Note:

This datasheet PDF includes multiple part numbers: HM6N70F, HM6N70.
Please refer to the document for exact specifications by model.

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