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HM6N70F, HM6N70 Datasheet - H&M Semiconductor

HM6N70F N-channel Enhanced VDMOSFET

HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and h.

HM6N70F Features

* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par

HM6N70-HMSemiconductor.pdf

This datasheet PDF includes multiple part numbers: HM6N70F, HM6N70. Please refer to the document for exact specifications by model.
HM6N70F Datasheet Preview Page 2 HM6N70F Datasheet Preview Page 3

Datasheet Details

Part number:

HM6N70F, HM6N70

Manufacturer:

H&M Semiconductor

File Size:

0.98 MB

Description:

N-channel enhanced vdmosfet.

Note:

This datasheet PDF includes multiple part numbers: HM6N70F, HM6N70.
Please refer to the document for exact specifications by model.

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HM6N70F HM6N70 N-channel Enhanced VDMOSFET H&M Semiconductor

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