HM6N70/F,the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and h
HM6N70F Features
* l Fast Switching l Low ON Resistance(Rdson≤2.2Ω) l Low Gate Charge (Typical Data:18.6nC) l Low Reverse transfer capacitances(Typical:6.6pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Par
Datasheet Details
HM6N70F, HM6N70
H&M Semiconductor
0.98 MB
N-channel enhanced vdmosfet.
This datasheet PDF includes multiple part numbers: HM6N70F, HM6N70.
Please refer to the document for exact specifications by model.
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