HM6N10R - N-Channel Enhancement Mode Power MOSFET
HM6N10R Features
* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation Application
* Power switching application
* Hard switched and high frequ
