HM6N10R N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The HM6N10R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM6N10R
Manufacturer: H&M Semiconductor
File Size: 503.55 KB
Datasheet: HM6N10R-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM6N10R Distributors

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HM6N10R N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM6N10R-like datasheet