HM6N10R

N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number:

HM6N10R

Manufacturer:

H&M Semiconductor

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503.55 KB

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Description:

N-channel enhancement mode power mosfet.
N-Channel Enhancement Mode Power MOSFET Description The HM6N10R uses advanced trench technology and .
The HM6N10R uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.

✔ HM6N10R Features

VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent

✔ HM6N10R Application

General Features
VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
High density cell design for

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HM6N10R N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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