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HM6N10R Datasheet - H&M Semiconductor

HM6N10R - N-Channel Enhancement Mode Power MOSFET

HM6N10R Features

* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Excellent package for good heat dissipation Application

* Power switching application

* Hard switched and high frequ

HM6N10R-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM6N10R

Manufacturer:

H&M Semiconductor

File Size:

503.55 KB

Description:

N-channel enhancement mode power mosfet.

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