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HM6N10PR Datasheet - H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET

HM6N10PR Features

* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Excellent package for good heat dissipation Application

* Power switching application

* Hard switched and high frequ

HM6N10PR Datasheet (603.00 KB)

Preview of HM6N10PR PDF

Datasheet Details

Part number:

HM6N10PR

Manufacturer:

H&M Semiconductor

File Size:

603.00 KB

Description:

N-channel enhancement mode power mosfet.

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HM6N10PR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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