Part number:
HM6N10PR
Manufacturer:
H&M Semiconductor
File Size:
603.00 KB
Description:
N-channel enhancement mode power mosfet.
* VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation Application
* Power switching application
* Hard switched and high frequ
HM6N10PR Datasheet (603.00 KB)
HM6N10PR
H&M Semiconductor
603.00 KB
N-channel enhancement mode power mosfet.
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