HM6N10PR Datasheet, Mosfet, H&M Semiconductor

✔ HM6N10PR Features

VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent

✔ HM6N10PR Application

General Features
VDS = 100V,ID = 6A RDS(ON) < 140mΩ @ VGS=10V (Typ:110mΩ)
High density cell design for

PDF File Details

H&M Semiconductor manufacturer logo

Part number:

HM6N10PR

Manufacturer:

H&M Semiconductor

File Size:

603.00 KB

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The HM6N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

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TAGS

HM6N10PR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor