HM80N06 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The HM80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM80N06
Manufacturer: H&M Semiconductor
File Size: 668.57 KB
Datasheet: HM80N06-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS =60V,ID =80A RDS(ON) =6.0mΩ(Typ) @ VGS=10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS

HM80N06 Distributors

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HM80N06 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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