HM80N06 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

The HM80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =60V,ID =80A RDS(ON) =6.0mΩ(Typ) @ VGS=10V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

H&M Semiconductor

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Datasheet Details

Part number	HM80N06
Manufacturer	H&M Semiconductor
File Size	668.57 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM80N06 Datasheet
Additional preview pages of the HM80N06 datasheet.

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N-Channel Enhancement Mode Power MOSFET Description The HM80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON) =6.

Published: Jul 15, 2025 |