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HM80N70 Datasheet - H&M Semiconductor

HM80N70 N-Channel Enhancement Mode Power MOSFET

  HM80N70 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM80N70 Device HM80N70 Device Package TO-220-3L Reel Size  -   Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Tape width - Quantity - +01 80VDS／±25.

HM80N70 Features

* VDSS=80V／VGSS=±25V／ID=66A RDS(ON)=12mΩ(Max.)@VGS=10V

* Reliab le and Rugged

* Advancedtrench process technology

* HighDensity Cell Design For Ultra Low On-Resistance  Applications

* Synchronous Rectification 

* Power Management

HM80N70-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM80N70

Manufacturer:

H&M Semiconductor

File Size:

773.94 KB

Description:

N-channel enhancement mode power mosfet.

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HM80N70 HM80N70 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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