HM80N70 - N-Channel Enhancement Mode Power MOSFET
HM80N70 Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking HM80N70 Device HM80N70 Device Package TO-220-3L Reel Size - Page 1 Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com Tape width - Quantity - +01 80VDS／±25
HM80N70 Features
* VDSS=80V／VGSS=±25V／ID=66A RDS(ON)=12mΩ(Max.)@VGS=10V
* Reliab le and Rugged
* Advancedtrench process technology
* HighDensity Cell Design For Ultra Low On-Resistance Applications
* Synchronous Rectification
* Power Management
