HMS11N65Q, HMS11N65D - 650V Super-Junction MOSFET

H&M Semiconductor

HMS11N65Q Description

*General .
The SJ MOSFET HMS11N65 has the low RDS(on), low gate charge,fast switching and excellent avalanche characteristics.

HMS11N65Q Features

* Much lower Ron
* A performance for On-state efficiency
* Much lower FOM for fast switching effciency HMS11N65D/Q 650V Super-Junction MOSFET VDS =650V RDS(ON) =310mΩ ID =11A
* RoHS COMPLIANT

📥 Download Datasheet

HMS11N65Q Datasheet Preview — This datasheet PDF includes multiple part numbers: HMS11N65Q, HMS11N65D. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: HMS11N65Q, HMS11N65D
Manufacturer: H&M Semiconductor
File Size: 1.23 MB
Datasheet: HMS11N65D-HMSemiconductor.pdf
Description: 650V Super-Junction MOSFET
Note: This datasheet PDF includes multiple part numbers: HMS11N65Q, HMS11N65D.
Please refer to the document for exact specifications by model.

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650V Super-Junction MOSFET H&M Semiconductor

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