HMS120N03D Datasheet - H&M Semiconductor

HMS120N03D - N-Channel Super Trench Power MOSFET

The HMS120N03D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching

HMS120N03D Features

* VDS =30V,ID =120A RDS(ON)=1.95mΩ (typical) @ VGS=10V RDS(ON)=2.85mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Application

* DC/DC Converter

Datasheet Details

HMS120N03D

H&M Semiconductor

426.44 KB

N-channel super trench power mosfet.

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