HMS120N85G, HMS120N85K Datasheet - H&M Semiconductor

HMS120N85G N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

HMS120N85G Features

* VDS =85V,ID =120A RDS(ON)=4.5mΩ , typical (TO-263)@ VGS=10V RDS(ON)=4.7mΩ , typical (TO-220)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-252

HMS120N85K-HMSemiconductor.pdf

HMS120N85G Datasheet Preview — This datasheet PDF includes multiple part numbers: HMS120N85G, HMS120N85K. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

HMS120N85G, HMS120N85K

Manufacturer:

H&M Semiconductor

File Size:

692.41 KB

Description:

N-channel super trench ii power mosfet.

Note:

This datasheet PDF includes multiple part numbers: HMS120N85G, HMS120N85K.
Please refer to the document for exact specifications by model.

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HMS120N85G HMS120N85K N-Channel Super Trench Power MOSFET H&M Semiconductor

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