Part number:
HMS120N10
Manufacturer:
H&M Semiconductor
File Size:
740.12 KB
Description:
N-channel super trench ii power mosfet.
Datasheet Details
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency
HMS120N10 Features
* VDS =100V,ID =120A RDS(ON)=4.6mΩ , typical (TO-263)@ VGS=10V RDS(ON)=4.7mΩ , typical (TO-220)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22
Datasheet Details
HMS120N10
H&M Semiconductor
740.12 KB
N-channel super trench ii power mosfet.
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