HMS120N10 Datasheet - H&M Semiconductor

HMS120N10, N-Channel Super Trench II Power MOSFET

HMS120N10, HMS120N10D N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

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Datasheet Details

Part number:

HMS120N10

Manufacturer:

H&M Semiconductor

File Size:

740.12 KB

Description:

N-Channel Super Trench II Power MOSFET

Features

* VDS =100V,ID =120A RDS(ON)=4.6mΩ , typical (TO-263)@ VGS=10V RDS(ON)=4.7mΩ , typical (TO-220)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

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HMS120N10 N-Channel Super Trench Power MOSFET H&M Semiconductor

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