HMS160N10 Datasheet - H&M Semiconductor

HMS160N10 N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

HMS160N10 Features

* VDS =100V,ID =160A RDS(ON)=2.7mΩ , typical @ VGS=10V ID=20A

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marki

HMS160N10-HMSemiconductor.pdf