The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency
HMS160N10D Features
* VDS =100V,ID =160A RDS(ON)=2.7mΩ , typical @ VGS=10V ID=20A
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marki
Datasheet Details
HMS160N10D, HMS160N10
H&M Semiconductor
796.70 KB
N-channel super trench ii power mosfet.
This datasheet PDF includes multiple part numbers: HMS160N10D, HMS160N10.
Please refer to the document for exact specifications by model.
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