Part number:
HMS80N10
Manufacturer:
H&M Semiconductor
File Size:
826.95 KB
Description:
N-channel super trench ii power mosfet.
Datasheet Details
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
This device is ideal for high-frequency
HMS80N10 Features
* VDS =V,ID =80A RDS(ON)=7.5mΩ , typical (TO-220)@ VGS=10V RDS(ON)=7.5mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220
Datasheet Details
HMS80N10
H&M Semiconductor
826.95 KB
N-channel super trench ii power mosfet.
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