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HM3406 - N-Channel Enhancement Mode Power MOSFET

HM3406 Description

30V N-Channel Enhancement-Mode MOSFET 30V N MOS VDS= 30V RDS(ON), Vgs@10V, Ids@A = 40mΩ RDS(ON), Vgs@4.5V, Ids@2.8A = 60mΩ .

HM3406 Features

* Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance +0 Package Dimensions SOT-23(PACKAGE) Marking D A6EV G S REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min.

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Datasheet Details

Part number
HM3406
Manufacturer
H&M Semiconductor
File Size
233.39 KB
Datasheet
HM3406-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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