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HM9926B Dual N-Channel Enhancement Mode Power MOSFET

HM9926B Description

HM9926B Dual N-Channel Enhancement Mode Power MOSFET .
The HM9926B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM9926B Features

* VDS =20V,ID =5A RDS(ON) < 50mΩ @ VGS=4.5V RDS(ON) < 63mΩ @ VGS=2.5V Schematic diagram
* High density cell design for ultra low Rdson

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Datasheet Details

Part number
HM9926B
Manufacturer
H&M Semiconductor
File Size
485.03 KB
Datasheet
HM9926B-HMSemiconductor.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
H&M Semiconductor HM9926B-like datasheet