Datasheet Details
- Part number
- HMS160N10
- Manufacturer
- H&M Semiconductor
- File Size
- 796.70 KB
- Datasheet
- HMS160N10-HMSemiconductor.pdf
- Description
- N-Channel Super Trench II Power MOSFET
HMS160N10 Description
HMS160N10, HMS160N10D N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency
switching performance.
HMS160N10 Features
* VDS =100V,ID =160A
RDS(ON)=2.7mΩ , typical @ VGS=10V ID=20A
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220
TO-263
Schematic Diagram
Package Marki
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