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HMS160N10D, HMS160N10 - N-Channel Super Trench II Power MOSFET

HMS160N10D Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application. DC/DC Converter. Ideal for high-frequency switching and synchronous rectification General.

Features

  • VDS =100V,ID =160A RDS(ON)=2.7mΩ , typical @ VGS=10V ID=20A.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HMS160N10D, HMS160N10. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HMS160N10D, HMS160N10
Manufacturer
H&M Semiconductor
File Size
796.70 KB
Datasheet
HMS160N10-HMSemiconductor.pdf
Description
N-Channel Super Trench II Power MOSFET
Note
This datasheet PDF includes multiple part numbers: HMS160N10D, HMS160N10.
Please refer to the document for exact specifications by model.

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