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HNM2302ALB

N-Channel Enhancement Mode Field Effect Transistor SMD

HNM2302ALB Features

*  

* 20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V  

* High dense cell design for extremely low RDS(ON)  

* Rugged and reliable  

* Lead free product is acquired  

* SOT-23 Package  

* Marking Code: A2SHB   Case Material: Molded Plastic.   UL Flammability Classification Rating 94V-0 Internal Block

HNM2302ALB Datasheet (272.26 KB)

Preview of HNM2302ALB PDF

Datasheet Details

Part number:

HNM2302ALB

Manufacturer:

HAOHAI

File Size:

272.26 KB

Description:

N-channel enhancement mode field effect transistor smd.

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HNM2302ALB N-Channel Enhancement Mode Field Effect Transistor SMD HAOHAI

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