HNM2302ALB - N-Channel Enhancement Mode Field Effect Transistor SMD

HAOHAI

Datasheet Details

Part number	HNM2302ALB
Manufacturer	HAOHAI
File Size	272.26 KB
Description	N-Channel Enhancement Mode Field Effect Transistor SMD
Datasheet	HNM2302ALB-HAOHAI.pdf

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20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　.
High dense cell design for extremely low RDS(ON) 　.
Rugged and reliable 　.
Lead free product is acquired 　.
SOT-23 Package 　.
Marking Code: A2SHB 　　Case Material: Molded Plastic. 　　UL Flammability Classification Rating 94V-0 Internal Block Diagram D HNM2302ALB（SOT-23） D HNM2302ALB N-Channel MOSFETs HNM2302ALB N-Channel Enhancement Mode Field Effect Transistor 2302 SI2302 AO2302 GMS2302 （） G S SOT-23 S G SOT-23 DEVICE.

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Published: Jun 10, 2019 |