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H02N60S, H02N60S-HI N-Channel Power FET

H02N60S Description

HI-SINCERITY MICROELECTRONICS CORP.Spec.No.: MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No.: 1/6 H02N60S Series N-Channel.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

H02N60S Features

* Robust High Voltage Termination
* Avalanc he Energy Specified
* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
* Diode is Characterized for Use in Bridge Circuits
* IDSS and VDS(on) Specified at Elevated Temperature Absolute

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This datasheet PDF includes multiple part numbers: H02N60S, H02N60S-HI. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
H02N60S, H02N60S-HI
Manufacturer
HI-SINCERITY
File Size
73.78 KB
Datasheet
H02N60S-HI-SINCERITY.pdf
Description
N-Channel Power FET
Note
This datasheet PDF includes multiple part numbers: H02N60S, H02N60S-HI.
Please refer to the document for exact specifications by model.

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N-Channel Power FET HI-SINCERITY
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