H02N60SJ Datasheet, Fet, HI-SINCERITY

H02N60SJ Features

  • Fet
  • Robust High Voltage Termination
  • Avalanc he Energy Specified
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
  • Diod

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Part number:

H02N60SJ

Manufacturer:

HI-SINCERITY

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73.78kb

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📄 Datasheet

Description:

N-channel power fet. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding perfo

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H02N60SJ Application

  • Applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed

TAGS

H02N60SJ
N-Channel
Power
FET
HI-SINCERITY

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