H02N60SJ, H02N60S-HI Datasheet - HI-SINCERITY

H02N60SJ N-Channel Power FET

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offer.

H02N60SJ Features

* Robust High Voltage Termination

* Avalanc he Energy Specified

* Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

* Diode is Characterized for Use in Bridge Circuits

* IDSS and VDS(on) Specified at Elevated Temperature Absolute

H02N60S-HI-SINCERITY.pdf

H02N60SJ Datasheet Preview — This datasheet PDF includes multiple part numbers: H02N60SJ, H02N60S-HI. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

H02N60SJ, H02N60S-HI

Manufacturer:

HI-SINCERITY

File Size:

73.78 KB

Description:

N-channel power fet.

Note:

This datasheet PDF includes multiple part numbers: H02N60SJ, H02N60S-HI.
Please refer to the document for exact specifications by model.

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H02N60SJ H02N60S-HI N-Channel Power FET HI-SINCERITY

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