H02N60SF

N-Channel Power FET

HI-SINCERITY

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H02N60SF

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HI-SINCERITY

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Description:

N-channel power fet.
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2.
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking ca.

✔ H02N60SF Features

Robust High Voltage Termination
Avalanc he Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
Diode is Characterize

✔ H02N60SF Application

in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge

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H02N60SF N-Channel Power FET HI-SINCERITY

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