H02N60SE, H02N60S-HI - N-Channel Power FET

HI-SINCERITY

The H02N60SE by HI-SINCERITY is a N-Channel Power FET. Below is the official datasheet preview.

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H02N60SE N-Channel Power FET by HI-SINCERITY - Datasheet Preview — Official preview page of the **H02N60SE** N-Channel Power FET datasheet (HI-SINCERITY).

Datasheet Details

Part number	H02N60SE, H02N60S-HI
Manufacturer	HI-SINCERITY
File Size	73.78 KB
Description	N-Channel Power FET
Datasheet	H02N60S-HI-SINCERITY.pdf
Note	This datasheet PDF includes multiple part numbers: H02N60SE, H02N60S-HI. Please refer to the document for exact specifications by model.
Additional preview pages of the H02N60SE datasheet.

H02N60SE Product details

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

Features

Robust High Voltage Termination.
Avalanc he Energy Specified.
Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
Diode is Characterized for Use in Bridge Circuits.
IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings H02N60S Series Pin Assignment Tab 3 2 1 Tab 3 2 Tab 1 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 3-Lead Plastic TO-251 Package Code: I Pin 1.

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Published: Feb 12, 2016 |