HSM12001B
HOLZWORTH
1.29 MB
12.5ghz/20ghz rf synthesizer modules.
HSM12001B HSM18001B
12.5GHz/20GHz RF Synthesizer Modules
oPlRzODUCT SUMMARY
The Holzworth HSM Series RF Synthesizer Module is a stand alone, CW source.
📁 Related Datasheet
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MODEL HSM12ɾHSM18E
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ʶ ʶ
˔4UBOEBSE%JNFOTJPOT ˙.PEFM)4.
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Model HSM12
-FBEXJSF 8(
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.
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(Hitachi Semiconductor)
HSM124S
Silicon Epitaxial Planar Diode for Switching
ADE-208-041D (Z) Rev. 4 Aug. 1995 Features
• Low reverse current. • MPAK package is suitable for.
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Silicon Schottky Barrier Diode for System Protection
ADE-208-111C (Z) Rev. 3 May 1995 Features
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(CHENMKO ENTERPRISE)
CHENMKO ENTERPRISE CO.,LTD
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HIGH EFFICIENCY SILICON RECTIFIER VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
HSM11SPT.
HSM101 - SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere)
(Rectron Semiconductor)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HSM101 THRU HSM106
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 t.
HSM101 - TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
(Dc Components)
DC COMPONENTS CO., LTD.
R
HSM101 THRU HSM106
RECTIFIER SPECIALISTS
TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
VOLTAGE RANG.
HSM102 - SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 600 Volts CURRENT 1.0 Ampere)
(Rectron Semiconductor)
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
HSM101 THRU HSM106
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 t.
HSM102 - TECHNICAL SPECIFICATIONS OF SURFACE MOUNT HIGH EFFICIENCY RECTIFIER
(Dc Components)
.
