Datasheet Details
- Part number
- HY1001M
- Manufacturer
- HOOYI
- File Size
- 1.02 MB
- Datasheet
- HY1001M-HOOYI.pdf
- Description
- N-Channel Enhancement Mode MOSFET
HY1001M Description
HY1001M/P N-Channel Enhancement Mode MOSFET .
5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C
10 www.
HY1001M Features
* 70V/75A,
RDS(ON)=7.8mΩ (typ. ) @ VGS=10V
* Avalanche Rated
* Reliable and Rugged
HY1001M Applications
* Power Management for Inverter Systems. S
D G
G
D
S
TO-220
D
G
Ordering and Marking Information
S
N-Channel MOSFET
P
HY1001
ÿ YYWWJ G
Package Code
P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attac
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