HY1001M N-Channel Enhancement Mode MOSFET

HOOYI

Description

HY1001M/P N-Channel Enhancement Mode MOSFET .
5 Sec, 245°C 1000 Hrs, Bias @ 125°C 168 Hrs, 100%RH, 2atm, 121°C 500 Cycles, -65°C~150°C 10 www.

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Datasheet Specifications

Part number: HY1001M
Manufacturer: HOOYI
File Size: 1.02 MB
Datasheet: HY1001M-HOOYI.pdf
Description: N-Channel Enhancement Mode MOSFET

Features

* 70V/75A, RDS(ON)=7.8mΩ (typ. ) @ VGS=10V
* Avalanche Rated
* Reliable and Rugged

Applications

* Power Management for Inverter Systems. S D G G D S TO-220 D G Ordering and Marking Information S N-Channel MOSFET P HY1001 ÿ YYWWJ G Package Code P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device Note: HOOYI lead-free products contain molding compounds/die attac

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N-Channel Enhancement Mode MOSFET HOOYI

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