HY1506D
HOOYI
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N-channel mosfet.
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HY1506I - N-Channel MOSFET
(HOOYI)
HY1506P/U/I
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/55A,
RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Fr.
HY1506P - N-Channel MOSFET
(HOOYI)
HY1506P
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/55A,
RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Free a.
HY1506S - N-Channel MOSFET
(HOOYI)
HY1506D/U/S
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source .
HY1506U - N-Channel MOSFET
(HOOYI)
HY1506P/U/I
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/55A,
RDS(ON)=10.5 mΩ (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged Lead Fr.
HY1509 - 2A 150KHZ PWM Buck DC/DC Converter
(HOOYI)
Datasheet
2A 150KHZ PWM Buck DC/DC Converter
HY1509
General Description
Features
The HY1509 is a of easy to use adjustable step-down (buck) switc.
HY15-P - Current Transducers HY 5 to 25-P
(LEM)
Current Transducers HY 5 to 25-P
For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary cir.
HY15P04D - P-Channel Enhancement Mode MOSFET
(HUAYI)
HY15P04 D/U/V
P-Channel Enhancement Mode MOSFET
Feature
-40V/-50A RDS(ON)= 9.7mΩ(typ.)@VGS = 10V RDS(ON)= 12mΩ(typ.)@VGS = 4.5V
100% avalanche t.
HY15P04U - P-Channel Enhancement Mode MOSFET
(HUAYI)
HY15P04 D/U/V
P-Channel Enhancement Mode MOSFET
Feature
-40V/-50A RDS(ON)= 9.7mΩ(typ.)@VGS = 10V RDS(ON)= 12mΩ(typ.)@VGS = 4.5V
100% avalanche t.
HY15P04V - P-Channel Enhancement Mode MOSFET
(HUAYI)
HY15P04 D/U/V
P-Channel Enhancement Mode MOSFET
Feature
-40V/-50A RDS(ON)= 9.7mΩ(typ.)@VGS = 10V RDS(ON)= 12mΩ(typ.)@VGS = 4.5V
100% avalanche t.
HY15P41 - 8-Bit RISC-like Mixed Signal Microcontroller
(HYCON)
HY15P41 Datasheet
8-Bit RISC-like Mixed Signal Microcontroller
. Embedded 18-Bit ΣΔADC
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DS-HY15P4.
