HY1908PM Datasheet, mosfet equivalent, HOOYI

HY1908PM Features

• Mosfet
• 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant) Pin Descript

PDF File Details

Part number:

HY1908PM

Manufacturer:

HOOYI

File Size:

3.99MB

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. DS G TO-220FB-3L DS G TO-220FB-3S DS G TO-263-2L Applications

Power Management for Inverter Systems. DS G TO-3PS-3L D

HY1908PM Application

• Applications
• Power Management for Inverter Systems. DS G TO-3PS-3L DS G TO-3PS-3M D DS G TO-220MF-3L G N-Channel MOSFET Ordering and

TAGS

HY1908PM

HOOYI

📁 Related Datasheet

HY1908P - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

HY1908PS - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

HY1908B - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

HY1908D - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • .

HY1908M - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

HY1908MF - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908P/M/B/PS/PM/MF N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged •.

HY1908S - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • .

HY1908U - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1908D/U/S N-Channel Enhancement Mode MOSFET Features • 80V/90A, RDS(ON)=7.8 mΩ (typ.) @ V =10V GS • Avalanche Rated • Reliable and Rugged • .

HY1904C2 - Single N-Channel Enhancement Mode MOSFET (HOOYI)
HY1904C2 Single N-Channel Enhancement Mode MOSFET Feature Description  40V/65A RDS(ON)= 5.1mΩ(typ.)@VGS = 10V RDS(ON)= 6.2mΩ(typ.)@VGS = 4.5V  100.

HY1904D - N-Channel Enhancement Mode MOSFET (HOOYI)
HY1904D/U/V Feature Description  40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugge.