Part number: HY1908PM
Manufacturer: HOOYI
File Size: 3.99MB
Download: 📄 Datasheet
Description: N-Channel Enhancement Mode MOSFET
* 80V/90A,
RDS(ON)= 7.0mΩ (typ.) @ VGS=10V
* Avalanche Rated
* Reliable and Rugged
* Lead Free and Green Devices Available
(RoHS Compliant)
Pin Descripti.
* Power Management for Inverter Systems.
DS G TO-3PS-3L
DS G TO-3PS-3M
D
DS G TO-220MF-3L
G N-Channel MOSFET
O.
DS G TO-220FB-3L
DS G TO-220FB-3S
DS G TO-263-2L
Applications
* Power Management for Inverter Systems.
DS G TO-3PS-3L
DS G TO-3PS-3M
D
DS G TO-220MF-3L
G N-Channel MOSFET
Ordering and Marking Information
S
P HY1908
YYÿ XXXJWW G
PS HY1.
Image gallery
TAGS
📁 Related Datasheet
HY1908P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1908P/M/B/PS/PM/MF
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)= 7.0mΩ (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged •.
HY1908PS - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1908P/M/B/PS/PM/MF
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)= 7.0mΩ (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged •.
HY1908B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1908P/M/B/PS/PM/MF
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)= 7.0mΩ (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged •.
HY1908D - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1908D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)=7.8 mΩ
(typ.) @ V =10V GS
• Avalanche Rated
• Reliable and Rugged
• .
HY1908M - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1908P/M/B/PS/PM/MF
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)= 7.0mΩ (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged •.
HY1908MF - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1908P/M/B/PS/PM/MF
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)= 7.0mΩ (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged •.
HY1908S - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1908D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)=7.8 mΩ
(typ.) @ V =10V GS
• Avalanche Rated
• Reliable and Rugged
• .
HY1908U - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1908D/U/S
N-Channel Enhancement Mode MOSFET
Features
• 80V/90A,
RDS(ON)=7.8 mΩ
(typ.) @ V =10V GS
• Avalanche Rated
• Reliable and Rugged
• .
HY1904C2 - Single N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1904C2
Single N-Channel Enhancement Mode MOSFET
Feature Description
40V/65A RDS(ON)= 5.1mΩ(typ.)@VGS = 10V RDS(ON)= 6.2mΩ(typ.)@VGS = 4.5V
100.
HY1904D - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1904D/U/V
Feature Description
40V/72A RDS(ON)= 4.8mΩ(typ.)@VGS = 10V RDS(ON)= 5.8mΩ(typ.)@VGS = 4.5V
100% Avalanche Tested Reliable and Rugge.
