HY3503B
HOOYI
532.35kb
N-channel mosfet.
TAGS
📁 Related Datasheet
HY3503 - N-Channel MOSFET
(HOOYI)
HY3503P/B
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Vo.
HY3503P - N-Channel MOSFET
(HOOYI)
HY3503P/B
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Vo.
HY3506B - N-Channel MOSFET
(HUAYI)
HY3506P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/190A
RDS(ON) = 3.5 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY3506P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
Pin Description
100% avalanche tested
Relia.
HY3506P - N-Channel MOSFET
(HUAYI)
HY3506P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/190A
RDS(ON) = 3.5 m(typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY3506W - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3506P/W
N-Channel Enhancement Mode MOSFET
Features
• • • •
60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V
Pin Description
100% avalanche tested
Relia.
HY3003 - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003B - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3003P - N-Channel MOSFET
(HOOYI)
HY3003P/B
N-Channel Enhancement Mode MOSFET
Features
• 30V/100A
RDS(ON)= 3.5mΩ (typ.) @ VGS=10V
• 100% EAS Guaranteed • Super Low Gate Charge • Exce.
HY3007B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY3007P/M/B/PS/PM
Features
• 68V / 120 A
RDS(ON)=
5.0
m
(typ.)
@
V =10V GS
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green .
