HY3506P

N-Channel Enhancement Mode MOSFET

HOOYI

HY3506P Features

* 60V/190A RDS(ON) = 3.0 mΩ (typ.) @ VGS=10V Pin Description 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications

* Switching application Power Manage

HY3506P General Description

100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications

*

* Switching application Power Management for Inverter Systems. S G N-Channel MOSFET Ordering and Marking Information Package Code ÿ .

HY3506P Datasheet (1.42 MB)

HY3506P Datasheet Preview — Preview of HY3506P PDF

Datasheet Details

Part number:

HY3506P

Manufacturer:

HOOYI

File Size:

1.42 MB

Description:

N-channel enhancement mode mosfet.

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HY3506P N-Channel Enhancement Mode MOSFET HOOYI

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HY3506P Features

HY3506P General Description

Datasheet Details

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HY3506P Distributor