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HY3506W, HY3506P N-Channel Enhancement Mode MOSFET

HY3506W Description

HY3506P/W N-Channel Enhancement Mode MOSFET .
100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G D G S D S TO-220 D TO-247 Applications.

HY3506W Applications

* Switching application Power Management for Inverter Systems. S G N-Channel MOSFET Ordering and Marking Information Package Code ÿ YYXXXJWW G P HY3506 ÿ YYXXXJWW G W HY3506 P : TO220-3L Date Code YYXXX WW Assembly Material G : Lead Free Device W : TO247-3L Note: HOOYI l

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HY3506W, HY3506P. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
HY3506W, HY3506P
Manufacturer
HOOYI
File Size
1.42 MB
Datasheet
HY3506P-HOOYI.pdf
Description
N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: HY3506W, HY3506P.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel Enhancement Mode MOSFET HOOYI
HOOYI HY3506W-like datasheet