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HY3708P

N-Channel Enhancement Mode MOSFET

HY3708P Features

* 80V/170A RDS(ON) = 3.8 mΩ (typ.) @ VGS=10V

* 100% avalanche tested

* Reliable and Rugged

* Lead Free and Green Devices Available (RoHS Compliant) Pin Description DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications

* Power Management for Invert

HY3708P General Description

DS G TO-220FB-3L DS G TO-220FB-3M DS G TO-263-2L Applications

* Power Management for Inverter Systems. DS G TO-3PS-3L D DS G TO-3PS-3M G N-Channel MOSFET S Ordering and Marking Information P HY3708 YYÿ XXXJWW G PS HY3708 YYÿ XXXJWW G M HY3708 YYÿ XXXJWW G PM HY3708 YYÿ XXXJWW G B.

HY3708P Datasheet (4.90 MB)

Preview of HY3708P PDF

Datasheet Details

Part number:

HY3708P

Manufacturer:

HOOYI

File Size:

4.90 MB

Description:

N-channel enhancement mode mosfet.

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TAGS

HY3708P N-Channel Enhancement Mode MOSFET HOOYI

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